- source-and-drain junction
- (场效应晶体管的)源漏结
English-Chinese computer dictionary (英汉计算机词汇大词典). 2013.
English-Chinese computer dictionary (英汉计算机词汇大词典). 2013.
Drain Induced Barrier Lowering — As channel length decreases, the barrier φB to be surmounted by an electron from the source on its way to the drain reduces Drain induced barrier lowering or DIBL is a secondary effect in MOSFETs referring originally to a reduction of threshold… … Wikipedia
Drain — Feldeffekttransistoren oder FET (engl. field effect transistor) sind eine Gruppe von unipolaren Transistoren, bei denen im Gegensatz zu den Bipolartransistoren nur ein Ladungstyp am Stromtransport beteiligt ist – abhängig von der Bauart… … Deutsch Wikipedia
Junction Field Effect Transistor — Der Sperrschicht Feldeffekttransistor (SFET, engl. junction fet, JFET bzw. non insulated gate fet, NIGFET) ist der am einfachsten aufgebaute Unipolartransistor aus der Gruppe der Feldeffekttransistoren; man unterscheidet zwischen n Kanal und p… … Deutsch Wikipedia
Common source — Figure 1: Basic N channel JFET common source circuit (neglecting biasing details). Figure 2: Basic N channel JFET common source circuit with source degeneration … Wikipedia
Common drain — In electronics, a common drain amplifier, also known as a source follower, is one of three basic single stage field effect transistor (FET) amplifier topologies, typically used as a voltage buffer. In this circuit the gate terminal of the… … Wikipedia
Depletion and enhancement modes — In field effect transistors (FETs), depletion mode and enhancement mode are two major transistor types, corresponding to whether the transistor is in an ON state or an OFF state at zero gate–source voltage. Enhancement mode MOSFETs are the common … Wikipedia
Bipolar junction transistor — BJT redirects here. For the Japanese language proficiency test, see Business Japanese Proficiency Test. PNP … Wikipedia
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